Abstract
The invention discloses a semiconductor device, which includes a first nitride semiconductor layer, a second nitride semiconductor layer, a source electrode, a drain electrode, a grid electrode, a through hole, a plurality of first p-type doped nitride semiconductor islands, and a second p-type doped nitride semiconductor island, wherein the second nitride semiconductor layer is disposed on the first nitride semiconductor layer; the source electrode, the drain electrode and the grid electrode are arranged on the second nitride semiconductor layer; the through hole extends upwards from the drain electrode; the first p-type doped nitride semiconductor islands are disposed on the second nitride semiconductor layer between the grid electrode and the drain electrode, each first p-type doped nitride semiconductor island is provided with a side surface which is away from the grid electrode and forms an interface with the drain electrode; the drain electrode extends upwards from the second nitride semiconductor layer to be higher than the first p-type doped nitride semiconductor island, and the drain electrode higher than the first p-type doped nitride semiconductor island extends in the direction away from the through hole; and the second p-type doped nitride semiconductor island is disposed on the second nitride semiconductor layer.