Abstract
A semiconductor device includes first and second nitride semiconductor layers, a source, a drain, a gate structure, a first p-type doped nitride semiconductor bump, and a plurality of second p-type doped nitride semiconductor bumps. The second nitride semiconductor layer is arranged on the first nitride semiconductor layer, and the band gap of the second nitride semiconductor layer is larger thanthat of the first nitride semiconductor layer. The source electrode, the drain electrode and the grid electrode structure are arranged on the second nitride semiconductor layer, at least one part of the drain electrode extends in the first direction, and the grid electrode structure is located between the source electrode and the drain electrode. The first p-type doped nitride semiconductor bump is disposed between the gate structure and the second nitride semiconductor layer. The second p-type doped nitride semiconductor bumps protrude from a top surface of the second nitride semiconductor layer and are arranged along the first direction between the gate structure and the drain. The second p-type doped nitride semiconductor bump is adjacent to the drain such that the drain is closer to the second p-type doped nitride semiconductor bump than the gate structure.