Abstract
A semiconductor device, which comprises a first nitride semiconductor layer, a second nitride semiconductor layer, a source electrode, a drain electrode, a gate structure, a plurality of first p-type doped nitride semiconductor islands, and a plurality of second p-type doped nitride semiconductor islands. The second nitride semiconductor layer is arranged on the first nitride semiconductor layer. The source electrode and the drain electrode are arranged on the second nitride semiconductor layer, wherein when the drain electrode is viewed in a direction perpendicular to the second nitride semiconductor layer, the drain electrode longitudinally extends in an extension direction. The gate structure is located between the source electrode and the drain electrode, The first p-type doped nitride semiconductor islands are arranged on the second nitride semiconductor layer and are arranged adjacent to the drain electrode in the extension direction, wherein when viewed in a direction perpendicular to the second nitride semiconductor layer, the drain electrode and the first p-type doped nitride semiconductor islands overlap with one another. The second p-type doped nitride semiconductor islands are arranged between the gate structure and the second nitride semiconductor layer.