Abstract
A nitride-type semiconductor device comprises a buffer body, a first nitride semiconductor layer, a shield layer, a second nitride semiconductor layer, a source/drain electrode, and a gate electrode. The first nitride semiconductor layer is arranged on the buffer body. The shielding layer is disposed between the buffer body and the first nitride semiconductor layer, and comprises a first isolation compound having a band gap larger than that of the first nitride semiconductor layer. The first isolation compound is made of at least one two-dimensional material. The two-dimensional material comprises a metal element. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer, and has a band gap smaller than a band gap of the first isolation compound and larger than a band gap of the first nitride semiconductor layer. Source/drain electrodes and a gate electrode are arranged on the second nitride semiconductor layer. The gate electrode is located between the source/drain electrodes, and the vertical projection of the source/drain electrodes and the gate electrode on the buffer body completely falls within the vertical projection of the shielding layer on the buffer body.