Abstract
A semiconductor device includes first and second nitrogen-based semiconductor layers, a gate electrode, first and second field plates, and a first dielectric layer. The first field plate is disposed over the second nitrogen-based semiconductor layer. The second field plate is discontinuous and is disposed over the second nitrogen-based semiconductor layer and is located at a position higher than the first field plate. The second field plate includes one or more closed discontinuities in its discontinuous region. A first dielectric layer is disposed over the second field plate. The first dielectric layer covers and penetrates the second discontinuous field plate in the discontinuous region such that the second field plate surrounds at least a portion of the first dielectric layer within one or more closed discontinuous contours thereof.