Abstract
The semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a crystal, a tube, a first conductive terminal, and a second conductive terminal. A second nitride semiconductor layer is provided on the first nitride semiconductor layer, and a band gap of the second nitride semiconductor layer is larger than a band gap of the first nitride semiconductor layer. A transistor is provided on the second nitride semiconductor layer. The first conductive terminal and the second conductive terminal are arranged on the second nitride semiconductor layer, the first nitride semiconductor layer further comprises a first conductive region and a doped region, the first conductive region is located between the first conductive terminal and the second conductive terminal, and the doped region is located between the first conductive terminal and the second conductive terminal. The doped region surrounds the first conductive region, the first conductive terminal, and the second conductive terminal, wherein a width of the first conductive region along a first direction is different from widths of the first conductive terminal and the second conductive terminal along the first direction.