Abstract
The invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate; a nitride semiconductor layer provided on the substrate; a first gate stack in contact with the nitride semiconductor layer; and a resistor laterally spaced apart from the first gate stack and electrically connected to the first gate stack. The resistor includes: a first conductive terminal in contact with the nitride semiconductor layer; a second conductive terminal in contact with the nitride semiconductor layer; a first doped region of the nitride semiconductor layer between the first conductive terminal and the second conductive terminal; and a first conductive region of the nitride semiconductor layer in contact with the first conductive terminal and the second conductive terminal.