Abstract
The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a drain electrode, a first source electrode, a second source electrode, a first gate electrode, and a second gate electrode. The first source electrode is disposed on a first side of the drain electrode. The second source electrode is disposed on a second side of the drain electrode opposite the first source electrode. The first gate electrode is disposed between the first source electrode and the drain electrode. The first gate electrode extends in a first direction. The second gate electrode is disposed between the second source electrode and the drain electrode. The second gate electrode extends in the first direction. In a top view of the semiconductor device, the first gate electrode is disposed above a first imaginary line substantially perpendicular to the first direction. In a top view of the semiconductor device, the second gate electrode is disposed below a second imaginary line substantially perpendicular to the first direction.