Abstract
The invention provides a transistor with high electron mobility. The transistor with high electron mobility comprises a substrate, a buffer layer, a channel layer, a barrier layer, a source electrode,a drain electrode and a grid electrode, wherein the substrate, the buffer layer, the channel layer, the barrier layer, the source electrode, the drain electrode and the grid electrode are sequentially stacked in the thickness direction of the transistor with high electron mobility. The barrier layer comprises a first doped semiconductor structure, and the channel layer comprises a second doped semiconductor structure. The invention further provides a manufacturing method of the transistor with high electron mobility. The transistor with high electron mobility has the characteristics of low drain electric field intensity, high breakdown voltage, high stability, low cost and the like.