Abstract
The invention provides a transistor with high electron mobility. The transistor includes a substrate, a buffer layer, a channel layer, a barrier layer, a source electrode, a drain electrode and a gateelectrode; the substrate, the buffer layer, the channel layer, the barrier layer, the source electrode, the drain electrode and the gate electrode are sequentially stacked in the thickness directionof the transistor, and the channel layer comprises a doped semiconductor structure. The invention further provides a manufacturing method of the transistor. The transistor is good in performance, andhas the characteristics of low drain electrode electric field intensity, high breakdown voltage, high stability, low cost and the like.