Abstract
A nitrogen-based semiconductor device includes first and second nitrogen-based semiconductor layers, a first electrode, a doped nitrogen-based semiconductor layer, a second electrode, and a gate electrode. The second nitrogen-based semiconductor layer is disposed on the first nitrogen-based semiconductor layer. The first and second nitrogen-based semiconductor layers collectively have an active portion and an electrically insulating portion surrounding the active portion. The first electrode is disposed on the second nitrogen-based semiconductor layer. The first electrode, the doped nitrogen-based semiconductor layer, the gate electrode, and the second electrode are disposed on the second nitrogen-based semiconductor layer. Each doped nitrogen-based semiconductor layer has a side surface facing away from the second electrode and spaced apart from the interface.