Abstract
A nitride-based semiconductor circuit includes a nitride-based semiconductor carrier, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a connector, a connection line, and a power supply line. The first nitride-based semiconductor layer is disposed over the nitride-based semiconductor carrier. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The connector is disposed on the second nitride-based semiconductor layer. The connecting line is electrically connected to one of the connectors. The power supply line is electrically connected to the nitride-based semiconductor carrier. The heterojunction is formed between the first nitride-based semiconductor layer and the second nitride-based semiconductor layer. A potential difference is applied between the power supply line and the connection line.