Abstract
A method includes applying a first voltage to a source of a first transistor of a detector cell of a semiconductor detector in a test wafer, and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector cell. The first transistor is coupled in series to the second transistor, and the first voltage is higher than the second voltage. A pre-exposure read operation is performed on the detector unit. After the first voltage and the second voltage are applied, light of an exposure device is projected to the gate of the second transistor. A post-exposure read operation is performed on the detector unit. Data of the pre-exposure read operation and data of the post-exposure read operation are compared. The intensity of the light is adjusted based on the compared data of the pre-exposure read operation and the post-exposure read operation. The embodiment of the invention also relates to a semiconductor structure and a manufacturing method thereof.