Abstract
The invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate; a first nitride semiconductor layer disposed on the substrate; asecond nitride semiconductor layer disposed on the first nitride semiconductor layer and having a band gap larger than a band gap of the first nitride semiconductor layer, the second nitride semiconductor layer forming a first recess and a second recess; and an electrode disposed on the second nitride semiconductor layer and including an element, in which the electrode is disposed in the first recess and the second recess.