Abstract
The invention relates to a semiconductor device. The semiconductor device includes a barrier layer, a dielectric layer, a first spacer, a second spacer, a first protective layer, and a gate; the dielectric layer is disposed on the barrier layer and defines a first recess; the first spacer is disposed within the first recess; the second spacer is disposed within the first recess and spaced apart from the first spacer; the first protective layer comprises a first portion between the first spacer and the dielectric layer; the first protective layer also comprises a second portion between the first spacer and the barrier layer; the first portion of the first protective layer includes a curved surface between the first spacer and the dielectric layer; the gate is disposed between the first spacer and the second spacer; the gate defines a gate recess; and the gate extends from a position between the first spacer and the second spacer to a position over the curved surface of the first portion of the first protective layer, and further extends to a position over the dielectric layer.