Abstract
The invention relates to a semiconductor device. The semiconductor device includes a barrier layer, a dielectric layer, a first spacer, a second spacer, and a gate. The dielectric layer is disposed on the barrier layer and defines a first recess. The first spacer is disposed within the first recess. The second spacer is disposed within the first recess and spaced apart from the first spacer. The barrier layer includes a second recess between the first spacer and the second spacer. The gate is disposed between the first spacer and the second spacer and fills the second recess of the barrier layer to contact the barrier layer, and the gate defines a gate recess.