Abstract
Disclosed is a semiconductor device (1, 2, 3, 4, 5), comprising a substrate (100), a channel layer (120), a barrier layer (130, 130'), a gate electrode (140, 140'), a strain layer (170, 210) and a passivation layer (180). The channel layer (120) is disposed on the substrate (100), the barrier layer (130, 130') is disposed on the channel layer (120), the gate electrode (140, 140') is disposed on the barrier layer (130, 130'), the strain layer (170, 210) is disposed on the barrier layer (130, 130'), the passivation layer (180) covers the gate electrode ( 140, 140') and strain layer (170, 210), and the passivation layer (180) and the strain layer (170, 210) are made from different materials.