Abstract
A semiconductor device includes a semiconductor layer, a doped nitride semiconductor layer, an undoped III-V semiconductor layer, a channel layer, and a barrier layer. The semiconductor layer has a dislocation extending upward. The doped nitride semiconductor layer is disposed on the semiconductor layer. The undoped III-V group semiconductor layer is arranged between the semiconductor layer and the doped nitride semiconductor layer, the lattice density of the undoped III-V group semiconductor layer is greater than that of the semiconductor layer, and the lattice density of the undoped III-V group semiconductor layer is greater than that of the doped nitride semiconductor layer; the undoped III-V semiconductor layer contacts the semiconductor layer to form a first interface, where the dislocation extends from the semiconductor layer to the first interface and into the undoped III-V semiconductor layer, where the dislocation changes a travel direction, where the change angle of the travel direction at the first interface is at least 30 degrees. The channel layer is disposed on the doped nitride semiconductor layer. The barrier layer is disposed on the channel layer.