Abstract
Some embodiments of the present disclosure provide a semiconductor device including a substrate, a channel layer, a barrier layer, a p-type doped III-V group layer, a source electrode, a drain electrode, and a doped semiconductor layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The p-type doped III-V group layer is disposed on the barrier layer. A gate electrode is arranged on the p-type doped III-V group layer. The source electrode and the drain electrode are arranged on two opposite sides of the gate electrode. The doped semiconductor layer has a first side near the gate electrode and a second side away from the gate electrode. The drain electrode covers a first side of the doped semiconductor layer.