Abstract
The semiconductor device includes first and second nitride-based semiconductor layers, a doped nitride-based semiconductor layer, a plurality of negatively charged ions, a source electrode, and a drain electrode. The negatively charged ions are selected from highly electronegative groups and are distributed in a plurality of depletion regions, and the depletion regions extend downwards from the doped nitride-based semiconductor layer and are located below the gate electrode. Any pair of adjacent depletion regions is separated from each other. The source electrode is disposed over the second nitride-based semiconductor layer and spaced apart from the depletion zone. The drain electrode is disposed over the second nitride-based semiconductor layer and spaced apart from the depletion zone.