Abstract
A semiconductor apparatus, comprising a semiconductor layer (11), a first doped nitride semiconductor layer arranged on the semiconductor layer (11), a second doped nitride semiconductor layer arranged on the first doped nitride semiconductor layer, and an undoped nitride semiconductor layer (12) located between the semiconductor layer (11) and the first doped nitride semiconductor layer, wherein the undoped nitride semiconductor layer (12) has a first surface that is in contact with the semiconductor layer (11) and a second surface that is in contact with the first doped nitride semiconductor layer.