摘要
一種半導體元件，包括基底、單原子層厚度的底部次層，設置於基底上且位於元件底部，並沿水平面方向延伸排列、單原子層厚度的金屬次層，以沿水平面方向延伸排列的形式上覆於底部次層且電性連接於底部次層、單原子層厚度的頂部次層，以沿水平面方向延伸排列的形式設置於部分金屬次層上方且電性連接於金屬次層以及接觸金屬層，設置於部分的金屬次層上方，接觸金屬層的頂面高於頂部次層的頂面，且接觸金屬層的底層接觸金屬原子與移除頂部次層而裸露的金屬次層原子表面形成對應的鍵結，並且金屬次層與底部次層間維持原對應的鍵結。
A semiconductor device comprising a substrate; a bottom sublayer of single atomic layer thickness disposed on the substrate, at the bottom of the device, and arranged in a horizontal direction; a metal sublayer of single atomic layer thickness overlying the bottom sublayer in a horizontal direction and electrically connected to the bottom sublayer; a top sublayer of single atomic layer thickness disposed in a horizontal direction and electrically connected to a portion of the metal sublayer, wherein the top surface of the contact metal layer is higher than the top surface of the top sublayer, wherein the contact metal atoms of the bottom layer of the contact metal layer form a corresponding bonding with the surface of the exposed metal sublayer by removing the top sublayer, and wherein the original corresponding bonding is maintained between the metal sublayer and the bottom sublayer.