Abstract
The invention discloses a semiconductor structure. The semiconductor structure includes a substrate, an epitaxial layer, an active area and a termination. The substrate has a first conducting type of semiconducting material. The epitaxial layer sets on the substrate and has the first conducting type of semiconducting material. The active area is working area of the semiconductor structure. The termination is to protect the active area. Wherein, the termination has a junction termination extension (JTE) and the JTE has a second conducting type of semiconducting material; a counter-doped area set in the JTE and has the first conducting type of semiconducting material; and dose of the first conducting type of semiconducting material in counter-doped area increases along one direction.