Abstract
A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a source, a drain, a gate structure, a first p-type doped nitride semiconductor bump, second p-type doped nitride semiconductor bumps, a source field plate, and a drain field plate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The source, the drain, the gate structure, and the first p-type doped nitride semiconductor bump are disposed on the second nitride semiconductor layer. The second p-type doped nitride semiconductor bumps are arranged between the gate structure and the drain along a first direction. The source field plate extends to a position over the gate structure. The drain field plate extends toward a position over the gate structure from the drain, in which the drain field plate has an extending length greater than a width or a length of the second p-type doped nitride semiconductor bumps.