Abstract
A semiconductor device includes a substrate and a conducting structure. The substrate has a first conductivity type and includes a first isolation area, a first doping area, and a second doping area. The first isolation area is disposed along the circumference of the substrate. The first doping area has the first conductivity type, and the second doping area has a second conductivity type opposite the first conductivity type. The conducting structure is disposed on the substrate, and at least a portion of the conducting structure is located on the first isolation area.