Abstract
A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a source and a drain, a gate structure, a first p-type doped nitride semiconductor layer, a conductive layer, a second p-type doped nitride semiconductor layer, a drain field plate, and a source field plate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The source, the drain, and the gate structure are disposed on the second nitride semiconductor layer. The first p-type doped nitride semiconductor layer is between the gate structure and the drain. The entire first p-doped nitride semiconductor layer is positioned outside the drain. The conductive layer is formed on the top surface of the first p-type doped nitride semiconductor layer. The second p-type doped nitride semiconductor layer is disposed on the second nitride semiconductor layer. The source field plate and the drain field plate cooperate to suppress the electric field distribution and reduce a peak value of an electric field.