Abstract
A one time programmable memory cell having a gate, a source region, a drain region, a capacitor dielectric layer and a conductive plug is provided. The gate dielectric is disposed on a substrate. The gate electrode is disposed on the gate oxide. The source region and the drain region are disposed in the substrate at the sides of the gate respectively. The capacitor dielectric layer is disposed on the source region. The capacitor dielectric layer is a resistive protection oxide layer or a salicide block layer. The conductive plug is disposed on the capacitor dielectric layer. The conductive plug is served as the first electrode of the capacitor and the source region is served as the second electrode of the capacitor. The memory state of this one time programmable memory (OTP) cell is alterable by making the capacitor dielectric layer breakdown.