Abstract
The invention relates to a one time programmable memory unit and an operation method thereof. The one time programmable memory unit comprises a grid dielectric layer, a grid electrode, a first source electrode/drain electrode, a second source electrode/drain electrode, a first self-aligned metal silicification layer, a capacitance dielectric layer, a second conducting plug and a first conducting plug, wherein the grid electrode is arranged on the grid dielectric layer; the first source electrode/drain electrode and the second source electrode/drain electrode are respectively arranged at two opposite sides below the grid electrode; the first self-aligned metal silicification layer is arranged on the first source electrode/drain electrode; the capacitance dielectric layer is arranged on the second source electrode/drain electrode; the second conducting plug is arranged on the first self-aligned metal silicification layer; the first conducting plug is arranged on the capacitance dielectric layer; and the size of the second conducting plug is different from that of the first conducting plug.