Abstract
An apparatus for removing impact of leakage current in SRAM comprises a bit－line pair including a first bit－line and a second bit－line, a pre－charge circuit connected to the bit－line pair for charging the bit－line pair, a plurality of memory cells connected between the first and second bit－lines, a sense amplifier for detecting voltage difference of the bit－line pair, and a calibration circuit connected between the memory cells and the sense amplifier. Through the calibration circuit, a voltage at the first bit－line, in which leakage current may occur, is transmitted to the calibrated second bit－line between the calibration circuit and the sense amplifier, a voltage at the second bit－line is transmitted to the calibrated first bit－line between the calibration circuit and the sense amplifier, and those voltages are reflected on the input signals of the sense amplifier, so as to remove the impact of leakage current.