Abstract
A group III nitrogen-based semiconductor device is provided. A group III nitrogen-based semiconductor device includes a silicon substrate. The silicon substrate has a surface having an array of periodic grooves formed therein. A discontinuous insulating layer is formed within each groove of the periodic groove array such that a portion of the surface of the silicon substrate between adjacent grooves is not covered by the discontinuous insulating layer. A first epitaxial group III nitrogen-based semiconductor layer is formed on a silicon substrate having an array of periodic grooves and a discontinuous insulating layer. The second group III nitrogen-based semiconductor layer is disposed on the first group III nitrogen-based semiconductor layer and has a band gap larger than a band gap of the first group III nitrogen-based semiconductor layer. At least one source and at least one drain are disposed on the second group III nitrogen-based semiconductor layer. The gate electrode is also disposed on the second group III nitrogen-based semiconductor layer between the source electrode and the drain electrode.