Abstract
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first nitride-based transistor, and a second nitride-based transistor. The first nitride-based transistor applies a 2DEG region as its channel and includes a first drain electrode in contact with the second nitride-based semiconductor layer to form a first Schottky diode with the second nitride-based semiconductor layer. And a second nitride-based transistor applying the 2DEG region as its channel and including a second drain electrode in contact with the second nitride-based semiconductor layer to form a second Schottky diode with the second nitride-based semiconductor layer, the first Schottky diode and the second Schottky diode are connected to the same node.