Abstract
The present invention relates to a self alignment and assembly fabrication method for multiple material layers, by using the this self alignment and assembly fabrication method, a variety of homogeneous/ heterogeneous materials can be stacked on a substrate by self-alignment way, without using any epitaxial buffer layers or gradient buffer layers, moreover, these stacked materials can be single crystal, polycrystalline or non- crystalline phase materials. So that, when applying this self alignment and assembly fabrication method to fabricate a multi-layer device, not only the material cost can be effectively reduced, but the wafer alignment problem existed in the conventional wafer bonding process can also be solved. In addition, in the present invention, rapid melting growth (RMG) is used for growing those multiple materials laterally and rapidly from the substrate surface by liquid phase epitaxy, therefore the thermal budget can be largely reduced when fabricating the multi-layer device.