摘要
本揭露提供一種太赫茲元件的製造方法，其包括使用化學氣相沉積製程於基板上形成光吸收結構。基板包括半導體基板、藍寶石基板、石英基板或其組合。光吸收結構包括半導體材料、二維材料、低維度材料、磁性材料、拓樸材料或其組合。
The present disclosure provides a method for manufacturing a terahertz (THz) device. The method includes a step of forming a light-absorbing structure on a substrate by using a chemical vapor deposition (CVD) process. The substrate includes a semiconductor structure, a sapphire substrate, a quartz substrate, or a combination thereof. The light-absorbing structure includes a semiconductor material, a two-dimensional material, a low-dimensional material, a magnetic material, a topological material, or a combination thereof.