Abstract
A novel photodiode device based on silicon nano-crystal architecture formed on the most upper layer of semiconductor integrated circuit is disclosed. The device is formed of a transparent conductive oxide layer as a upper electrode plate, a lower electrode plate and amid them are an insulating layer having myriad nano-crystals therein. The device provide high photo energy to electrical energy convert efficiency due to the direct band gap and large surface area than conventional P/N CMOS image sensor.