Abstract
The present invention provides an oxidation method for a nitride thin film on a conducting substrate and comprises the following steps. First, a conducting substrate is provided. Using thin film growth method or nitrogenizing the surface of the substrate to form a nitride thin film. A local electrode is provided, such as a conducting probe in a scanning probe microscope. A local intensive electrical field is generated between the local electrode and the substrate to pass through the nitride thin film, under which the nitride thin film is oxidized. The oxidation method for a nitride thin film disclosed in the present invention can be applied in many ways, such as the method for forming an etching pattern on a nitride thin film, the data recording method and used as a growing template in the chemical selectivity growth method.