Abstract
The invention provides a micro detector and a defect measuring method. The micro detector comprises a substrate, a fin-shaped structure, a floating gate electrode, a sensing gate electrode, a readinggate electrode and an antenna layer, wherein the fin-shaped structure is located on the substrate, the floating gate electrode is located on the substrate, the floating gate electrode and the fin-shaped structure perpendicularly intersect with each other, the sensing gate electrode is located on one side of the fin-shaped structure, the reading gate electrode is formed on the other side of the fin-shaped structure, and the antenna layer is connected with the sensing gate electrode and located above the sensing gate electrode. According to the invention, the antenna layer generates an induced charge after contacting an external energy source, and the induced charge is stored in the floating gate electrode through a coupling effect, so that the defect distribution in the wafer manufacturingprocess can be estimated by calculating induced charges.