Abstract
A micro-connector and manufacturing method thereof are provided. The micro-connector includes a SOI substrate, at least a first stress-layer, at least a second stress-layer, and a cap. The SOI substrate includes a patterned first silicon-layer having a first opening and at least a cantilever-terminal, a second silicon-layer, and a patterned insulator disposed between the patterned first silicon-layer and the second silicon-layer, wherein the patterned insulator has a second opening corresponding to the first opening and the cantilever-terminal is protruded above the second opening. The first stress-layer is formed on an end of the cantilever-terminal away an inside wall of the first opening, and makes the cantilever-terminal bend toward a direction. The second stress-layer is formed on portion of the cantilever-terminal out of the end, and makes the cantilever-terminal bend toward another direction. The cap is disposed on the SOI substrate and covers the cantilever-terminal.