Abstract
PROBLEM TO BE SOLVED: To form a fine pattern by using self-organizing molecule. SOLUTION: A laminated body 1 of an epitaxial layer 11 formed of GaAs and an epitaxial layer 12 formed of Alx Ga(1-x) As is cleaved in ethanol solution wherein octadecanthiol is dissolved. Octadecanthiol 3 is selectively attracted to a (110) surface of the epitaxial layer 11 in a cleaved surface and a line of octadecanthiol molecule corresponding to a thickness of the epitaxial layer 11 is obtained by cleaning the lamination body 1 by pure ethanol. When the (100) surface of GaAs is etched and a V-groove is formed, an Alx Ga(1-x) As layer is selectively formed in the V groove and therefore it is also possible to obtain a line by attracting stearic acid derivative molecule selectively thereon.