Abstract
A flash memory cell is disclosed in the specification and drawing. The flash memory cell is described and shown with at least one floating gate heavily doped with P-type ions.
- Title
- 快閃記體體單元
- Translated title
- Flash Memory Cell
- Creators - without role
- 國立清華大學金雅琴林崇榮
- Identifiers
- 9957787746606774
- Note
- 優先權美國 12/408,933 20090323
- Academic Unit
- Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- Traditional Chinese
- Resource Type
- Patent
- Patent
- I441321; I441321
- Date application
- 11/01/2010