Abstract
The present invention provides a method for selectively allowing film-forming molecules to be chemically adsorbed onto an Si substrate to produce a good and robust organic monomolecular film, wherein molecules with SH groups are chemically adsorbed onto the Si substrate to form a monomolecular film of the molecules by heating an As molecular beam source 4 to allow a monoatomic layer thickness of arsenic to be adsorbed onto the clean surface of the Si substrate set on a sample stage 3 and then immersing the Si substrate terminated by arsenic in a solution containing molecules with SH groups.