Abstract
A nitride semiconductor device includes a semiconductor carrier, a first nitride-based chip, and a first conformal connection structure. The first nitride-based chip is disposed on the semiconductor carrier. The semiconductor carrier has a first plane. The first nitride-based chip has a second plane, a first conductive pad, and a first inclined surface. The first conductive pad is disposed in the second plane. The first ramp connects the second plane to the first plane. The first conformal connection structure is disposed on the first plane and the first nitride-based chip. A first obtuse angle is formed between the second plane and the first inclined plane. Each first conformal connection structure covers one of the first ramps and one of the first obtuse angles of the first nitride-based chip, and is electrically connected to the first conductive pad.