Abstract
The nitrogen-based semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a nitride conductive layer, a first gate electrode, and a second gate electrode. A second nitride semiconductor layer is provided on the first nitride semiconductor layer, and a band gap of the second nitride semiconductor layer is larger than a band gap of the first nitride semiconductor layer. A nitride conductive layer is provided on the second nitride semiconductor layer. A first gate electrode is disposed on the nitride conductive layer and forms a first interface with the nitride conductive layer. A second gate electrode is disposed on the nitride conductive layer and forms a second interface with the nitride conductive layer, where the first interface and the second interface are spaced apart from each other.