Abstract
A nitride-based semiconductor device includes first and second nitride-based semiconductor layers, a source electrode, a drain electrode, and a gate electrode, a doped nitride-based semiconductor layer, and a first field plate. The first field plate is disposed over the doped nitride-based semiconductor layer. The vertical projection of the doped nitride-based semiconductor layer on the second nitride-based semiconductor layer is overlapped with the vertical projection of the first field plate on the second nitride-based semiconductor layer; the vertical projection of the gate electrode on the second nitride-based semiconductor layer is physically separated from the vertical projection of the first field plate on the second nitride-based semiconductor layer.