Abstract
The utility model provides a gallium nitride semiconductor device. The gallium nitride semiconductor device comprises a substrate, and a buffer layer, a carbon doping layer, a channel layer and a barrier layer which are sequentially formed on the substrate, the carbon-doped layer comprises a carbon-doped high-resistance layer and an unintentionally-doped layer, the carbon concentration of the carbon-doped high-resistance layer is greater than that of the unintentionally-doped layer, and the unintentionally-doped layer is located between the buffer layer and the carbon-doped high-resistance layer, or the unintentionally-doped layer is located in the carbon-doped high-resistance layer. The gallium nitride semiconductor device is uniform in carbon concentration and good in breakdown uniformity.