Abstract
The utility model provides a gallium nitride semiconductor device packaging piece. The gallium nitride semiconductor device packaging piece comprises a substrate, a sealing material and a gallium nitride semiconductor device, a source terminal, a gate terminal and a drain terminal are arranged on the substrate; the gallium nitride semiconductor device comprises a silicon substrate, an epitaxial layer, source metal, gate metal and drain metal. The epitaxial layer is manufactured on the silicon substrate, the source electrode metal, the grid electrode metal and the drain electrode metal are all located on the epitaxial layer, and the metal layer is arranged on the back face of the silicon substrate; a through-silicon via is arranged on the silicon substrate and the epitaxial layer in a penetrating manner, an electrical interconnection piece is arranged in the through-silicon via, the source electrode metal is electrically connected with the metal layer through the electrical interconnection piece, and the metal layer is electrically connected with the source electrode terminal; the drain electrode metal is connected with a first bridging copper sheet, and the first bridging copper sheet penetrates through the sealing material and then is electrically connected with the drain electrode terminal; the gate metal is electrically connected to the gate terminal. The gallium nitride semiconductor device packaging piece adopts the silicon substrate and is good in heat conduction performance.