Abstract
A nitrogen-based semiconductor device includes first and second nitrogen-based semiconductor layers, a doped III-V semiconductor layer, a gate electrode, and first and second source/drain (S/D) electrodes. The doped group III-V semiconductor layer is disposed on the second nitrogen-based semiconductor layer and has first and second leakage current blocking parts extending downward from a top surface of the doped group III-V semiconductor layer. A gate electrode is disposed over the doped III-V semiconductor layer, wherein the gate electrode has a pair of opposing edges between the first and second leakage current blocking parts. One edge of the gate electrode overlaps the first leakage current blocking part. The first leakage current blocking part is located between the first S/D electrode and the gate electrode. The second leakage current blocking part is located between the second S/D electrode and the gate electrode.