Abstract
A nitrogen-based semiconductor device includes a first nitrogen-based semiconductor layer, a second nitrogen-based semiconductor layer, a source electrode, a drain electrode, a gate electrode, and a single field plate. The source electrode, the drain electrode, and the gate electrode are disposed on the second nitrogen-based semiconductor layer. The gate electrode is between the source electrode and the drain electrode. The single field plate is disposed on the gate electrode and extends toward the drain electrode. The field plate has a first end, a second end, and an intermediate portion. The first and second end portions have substantially the same height. A plurality of portions of the intermediate portion are located at a lower position than the first and second end portions, and the first end portion extends laterally at a length greater than a width of the gate electrode.