Abstract
A method of operating non-volatile memory without a gate is disclosed. To program the selected cells, a band to band hot electron injection is taken. To read the selected cell of the twin nonvolatile cells, a reverse read is taken so as to shield the unselected cell. In the reading process, a depletion region due to a reverse bias occurs on the un-selected cell should have its depletion boundary connected with the tapered end of the channel due to the electrons existed at the nitride layer of the selected cell so that the channel beneath the data storage gate is conducted. To erase the datum of the selected cell, a band to band induced hot hole injection is taken to inject hole.