Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes a silicon substrate. A first III-V compound layer is disposed over the silicon substrate. A second III-V compound layer is disposed over the first III-V compound layer. The semiconductor device includes a transistor disposed over the first III-V compound layer and partially in the second III-V compound layer. The semiconductor device includes a diode disposed in the silicon substrate. The semiconductor device includes a via hole coupled to the diode and extending through at least the first III-V compound layer. The via hole is electrically coupled to the transistor or disposed adjacent to the transistor. The invention provides a plasma protection diode for a HEMT device.