Abstract
The present invention provides a method for eliminating crosstalk interference of contact/via-programmed read-only-memory. The contact/via-programmed read-only-memory comprises a plurality of word lines, a plurality of bit line, a plurality of pre-charged transistors, and a plurality of clamping transistors. When one of the bit lines is picked, adjacent bit lines on opposite sides thereof are clamped to a predetermined voltage, such as VDD or GND or other voltage, by the clamping transistors. The clamping does not cause voltage drop in the adjacent bit line and may at the same time eliminate crosstalking from the picked bit line thereby avoiding the code-reading failure caused by crosstalk occurring in the high speed contact/via-programmed read-only-memory and thus achieving higher speed.